Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters
Identifieur interne : 001806 ( Main/Repository ); précédent : 001805; suivant : 001807Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters
Auteurs : RBID : Pascal:12-0300073Descripteurs français
- Pascal (Inist)
- Epitaxie phase vapeur, Méthode MOVPE, Composé III-V, Epaisseur couche, Mécanisme croissance, Méthode MOCVD, Condition opératoire, Couche mince, Dislocation filetée, Réseau hexagonal, Dislocation coin, Morphologie cristalline, Composé de l'indium, Nitrure d'indium, Semiconducteur, InN, 8115K, 6855J, 8110A, 8115G.
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Abstract
Our study of samples grown in different metalorganic chemical vapor deposition reactors and with different growth conditions reveals that V-pits are always present in (InxAl1-x)N films whatever the layer thickness and the InN content. V-pits are empty inverted pyramids terminating threading dislocations. InN-rich triangular regions are present around the threading dislocations terminated by pits with a hexagonal 6-fold symmetry distribution in {11-20} planes. The nature of the facets of the V-pits depends on the growth conditions: pits with either {11-2l}, l being between 1 and 3, or {1-101} facets have been observed. Moreover, the nature of the threading dislocations terminated by pits also depends on the growth conditions. Our observations suggest that with a high V/III ratio only edge a+c-type dislocations are terminated by pits whereas with a low V/III ratio both edge a-type and mixed a+c-type dislocations are terminated by pits.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (In<sub>x</sub>Al<sub>1-x</sub>)N layers as a function of InN content, layer thickness and growth parameters</title><author><name sortKey="Vennegues, P" uniqKey="Vennegues P">P. Vennegues</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis</s1><s2>06560 Valbonne</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Valbonne</settlement></placeName></affiliation></author><author><name sortKey="Diaby, B S" uniqKey="Diaby B">B. S. Diaby</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis</s1><s2>06560 Valbonne</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Valbonne</settlement></placeName></affiliation></author><author><name sortKey="Kim Chauveau, H" uniqKey="Kim Chauveau H">H. Kim-Chauveau</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis</s1><s2>06560 Valbonne</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Valbonne</settlement></placeName></affiliation></author><author><name sortKey="Bodiou, L" uniqKey="Bodiou L">L. Bodiou</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis</s1><s2>06560 Valbonne</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Valbonne</settlement></placeName></affiliation></author><author><name sortKey="Schenk, H P D" uniqKey="Schenk H">H. P. D. Schenk</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis</s1><s2>06560 Valbonne</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Valbonne</settlement></placeName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>SOITEC Specialty Electronics, Place Marcel Rebuffat, Z.A. de Courtaboeuf 7</s1><s2>91140 Villejust</s2><s3>FRA</s3><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Villejust</settlement></placeName></affiliation></author><author><name sortKey="Frayssinet, E" uniqKey="Frayssinet E">E. Frayssinet</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis</s1><s2>06560 Valbonne</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Valbonne</settlement></placeName></affiliation></author><author><name sortKey="Martin, R W" uniqKey="Martin R">R. W. Martin</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, SUPA, University of Strathclyde</s1><s2>Glasgow, G4 0NG</s2><s3>GBR</s3><sZ>7 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Glasgow, G4 0NG</wicri:noRegion></affiliation></author><author><name sortKey="Watson, I M" uniqKey="Watson I">I. M. Watson</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Institute of Photonics, SUPA, University of Strathclyde</s1><s2>Glasgow, G4 ONW</s2><s3>GBR</s3><sZ>8 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Glasgow, G4 ONW</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0300073</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0300073 INIST</idno><idno type="RBID">Pascal:12-0300073</idno><idno type="wicri:Area/Main/Corpus">001A89</idno><idno type="wicri:Area/Main/Repository">001806</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystal morphology</term><term>Edge dislocations</term><term>Growth mechanism</term><term>Hexagonal lattices</term><term>III-V compound</term><term>Indium compounds</term><term>Indium nitride</term><term>Layer thickness</term><term>MOCVD</term><term>MOVPE method</term><term>Operating conditions</term><term>Semiconductor materials</term><term>Thin films</term><term>Threading dislocation</term><term>VPE</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Epitaxie phase vapeur</term><term>Méthode MOVPE</term><term>Composé III-V</term><term>Epaisseur couche</term><term>Mécanisme croissance</term><term>Méthode MOCVD</term><term>Condition opératoire</term><term>Couche mince</term><term>Dislocation filetée</term><term>Réseau hexagonal</term><term>Dislocation coin</term><term>Morphologie cristalline</term><term>Composé de l'indium</term><term>Nitrure d'indium</term><term>Semiconducteur</term><term>InN</term><term>8115K</term><term>6855J</term><term>8110A</term><term>8115G</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Our study of samples grown in different metalorganic chemical vapor deposition reactors and with different growth conditions reveals that V-pits are always present in (In<sub>x</sub>Al<sub>1-x</sub>)N films whatever the layer thickness and the InN content. V-pits are empty inverted pyramids terminating threading dislocations. InN-rich triangular regions are present around the threading dislocations terminated by pits with a hexagonal 6-fold symmetry distribution in {11-20} planes. The nature of the facets of the V-pits depends on the growth conditions: pits with either {11-2l}, l being between 1 and 3, or {1-101} facets have been observed. Moreover, the nature of the threading dislocations terminated by pits also depends on the growth conditions. Our observations suggest that with a high V/III ratio only edge a+c-type dislocations are terminated by pits whereas with a low V/III ratio both edge a-type and mixed a+c-type dislocations are terminated by pits.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>353</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (In<sub>x</sub>Al<sub>1-x</sub>)N layers as a function of InN content, layer thickness and growth parameters</s1></fA08><fA11 i1="01" i2="1"><s1>VENNEGUES (P.)</s1></fA11><fA11 i1="02" i2="1"><s1>DIABY (B. S.)</s1></fA11><fA11 i1="03" i2="1"><s1>KIM-CHAUVEAU (H.)</s1></fA11><fA11 i1="04" i2="1"><s1>BODIOU (L.)</s1></fA11><fA11 i1="05" i2="1"><s1>SCHENK (H. P. D.)</s1></fA11><fA11 i1="06" i2="1"><s1>FRAYSSINET (E.)</s1></fA11><fA11 i1="07" i2="1"><s1>MARTIN (R. W.)</s1></fA11><fA11 i1="08" i2="1"><s1>WATSON (I. M.)</s1></fA11><fA14 i1="01"><s1>CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis</s1><s2>06560 Valbonne</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>SOITEC Specialty Electronics, Place Marcel Rebuffat, Z.A. de Courtaboeuf 7</s1><s2>91140 Villejust</s2><s3>FRA</s3><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Physics, SUPA, University of Strathclyde</s1><s2>Glasgow, G4 0NG</s2><s3>GBR</s3><sZ>7 aut.</sZ></fA14><fA14 i1="04"><s1>Institute of Photonics, SUPA, University of Strathclyde</s1><s2>Glasgow, G4 ONW</s2><s3>GBR</s3><sZ>8 aut.</sZ></fA14><fA20><s1>108-114</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000504029580210</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>23 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0300073</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Our study of samples grown in different metalorganic chemical vapor deposition reactors and with different growth conditions reveals that V-pits are always present in (In<sub>x</sub>Al<sub>1-x</sub>)N films whatever the layer thickness and the InN content. V-pits are empty inverted pyramids terminating threading dislocations. InN-rich triangular regions are present around the threading dislocations terminated by pits with a hexagonal 6-fold symmetry distribution in {11-20} planes. The nature of the facets of the V-pits depends on the growth conditions: pits with either {11-2l}, l being between 1 and 3, or {1-101} facets have been observed. Moreover, the nature of the threading dislocations terminated by pits also depends on the growth conditions. Our observations suggest that with a high V/III ratio only edge a+c-type dislocations are terminated by pits whereas with a low V/III ratio both edge a-type and mixed a+c-type dislocations are terminated by pits.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15K</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A10A</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A15G</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Epitaxie phase vapeur</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>VPE</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Méthode MOVPE</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>MOVPE method</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Método MOVPE</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Composé III-V</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>III-V compound</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Epaisseur couche</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Layer thickness</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Espesor capa</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Méthode MOCVD</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>MOCVD</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Condition opératoire</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Operating conditions</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Condición operatoria</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Couche mince</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Thin films</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Dislocation filetée</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Threading dislocation</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Dislocación aterrajada</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Réseau hexagonal</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Hexagonal lattices</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Dislocation coin</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Edge dislocations</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Morphologie cristalline</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Crystal morphology</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Composé de l'indium</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Indium compounds</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Nitrure d'indium</s0><s5>15</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Indium nitride</s0><s5>15</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Indio nitruro</s0><s5>15</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>16</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>16</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>InN</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>8115K</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>6855J</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>8110A</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>8115G</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>226</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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